AP80P01NF datasheet, аналоги, основные параметры
Наименование производителя: AP80P01NF 📄📄
Тип транзистора: MOSFET
Полярность: P
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 41.67 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 12 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 20.6 ns
Cossⓘ - Выходная емкость: 769 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0045 Ohm
Тип корпуса: PDFN5X6-8L
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Аналог (замена) для AP80P01NF
- подборⓘ MOSFET транзистора по параметрам
AP80P01NF даташит
ap80p01nf.pdf
AP80P01NF -12V P-Channel Enhancement Mode MOSFET Description The AP80P01NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-80A DS D R
ap80p06d.pdf
AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R
ap80p04d.pdf
AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R
Другие IGBT... AP60N02BD, AP130N20MP, AP3404MI, AP50N06DF, AP6G04S, AP70N03DF, AP80N08D, AP80N08NF, IRFZ24N, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AP10H03DF, AP10H03S, AP15P04S, AP3400MI
History: PSMN1R0-25YLD | AP8G04S | IRF7750 | PSMN1R0-40ULD | SSM4920M | SI5441DC | IRLHS6376
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