AP10H03DF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10H03DF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 26 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 39 nS

Cossⓘ - Capacitancia de salida: 126 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: PDFN3X3-8L

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AP10H03DF datasheet

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AP10H03DF

AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features

 7.1. Size:1932K  cn apm
 ap10h03s.pdf pdf_icon

AP10H03DF

AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R

 8.1. Size:1628K  cn apm
 ap10h04df.pdf pdf_icon

AP10H03DF

AP10H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP10H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =12.5A DS D R

 9.1. Size:1583K  cn apm
 ap10h10s.pdf pdf_icon

AP10H03DF

AP10H10S 100V N+N-Channel Enhancement Mode MOSFET Description The AP10H10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R

MOSTRAR MÁS

Otros transistores... AP70N03DF, AP80N08D, AP80N08NF, AP80P01NF, AP8P10S, AP90N06D, APG12N10D, AP10G04DF, AO3400A, AP10H03S, AP15P04S, AP3400MI, AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF