AP10H03DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP10H03DF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 26 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 126 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Paquete / Cubierta: PDFN3X3-8L
Búsqueda de reemplazo de AP10H03DF MOSFET
AP10H03DF Datasheet (PDF)
ap10h03df.pdf
AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features
ap10h03s.pdf
AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS DR
Otros transistores... AP70N03DF , AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , P60NF06 , AP10H03S , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF .
History: AP90N06D
History: AP90N06D
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP60P02D | AP60N06F | AP60N04NF | AP60N04DF | AP60N04D | AP60N03Y | AP60N03NF | AP60N03DF | AP60N03D | AP60N02NF | AP60N02DF | AP60N02D | AP5P06MSI | AP5P04MI | AP40P04NF | AP40P04DF
Popular searches
2sa899 | 2sc1166 | jcs9n50fc datasheet | 2n2147 | 2sc870 | 2sa771 | d667 | a965 transistor