AP10H03S MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Principales características: AP10H03S

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AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R

7.1. Size:1882K cn apm
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AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features

8.1. Size:1628K cn apm
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AP10H04DF 40V N+N-Channel Enhancement Mode MOSFET Description The AP10H04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =12.5A DS D R

9.1. Size:1583K cn apm
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AP10H10S 100V N+N-Channel Enhancement Mode MOSFET Description The AP10H10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS D R

Otros transistores... AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , IRFB31N20D , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S .