All MOSFET. AP10H03S Datasheet

 

AP10H03S Datasheet and Replacement


   Type Designator: AP10H03S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 126 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: SOP8
 

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AP10H03S Datasheet (PDF)

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AP10H03S

AP10H03S 30V N+N-Channel Enhancement Mode MOSFET Description The AP10H03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS DR

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AP10H03S

AP10H03DF 30V N+N-Channel Enhancement Mode MOSFET General Description The AP10H03DF is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. General Features

Datasheet: AP80N08D , AP80N08NF , AP80P01NF , AP8P10S , AP90N06D , APG12N10D , AP10G04DF , AP10H03DF , IRFZ46N , AP15P04S , AP3400MI , AP34N20P , AP50P02DF , AP70H06NF , AP80N06D , AP85N03NF , AP8G04S .

History: JMSH0401ATL

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