AP220N06MP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP220N06MP 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 168 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 220 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 1250 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO247
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AP220N06MP datasheet
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AP220N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP220N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =220A DS D R
ap220n08tlg1.pdf
AP220N08TLG1 80V N-Channel Enhancement Mode MOSFET Description The AP220N08TLG1 uses advanced APM-SGT I technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =220A DS D R
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AP220N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP220N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =220A DS D R
Otros transistores... AP34N20P, AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF, K2611, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S
History: TK10A60W5 | MSK7N80F | IRF9Z24L | SSM5H05TU | SI5515CDC | AP0904GP-HF | AP10N012P
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