AP2301AI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP2301AI 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 3.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 32.2 nS
Cossⓘ - Capacitancia de salida: 82 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Encapsulados: SOT23
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AP2301AI datasheet
ap2301ai.pdf
AP2301AI -20V P-Channel Enhancement Mode MOSFET Description The AP2301AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-3.3A DS D R
ap2301agn.pdf
AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97m D Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec
ap2301agn-hf.pdf
AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l
ap2301gn.pdf
AP2301GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec
Otros transistores... AP50P02DF, AP70H06NF, AP80N06D, AP85N03NF, AP8G04S, AP10N04S, AP15G04NF, AP220N06MP, EMB04N03H, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, AP8P06S, AP90N08NF, AP10G04S, AP15H06S
History: MTB23P06VT4 | PDN4911S | SI6404DQ | AP4563GH | AP10N4R5S | IXTQ180N10T | IXTT10N100D2
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