AP2301AI - Даташиты. Аналоги. Основные параметры

AP2301AI -20V P-Channel Enhancement Mode MOSFET Description The AP2301AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-3.3A DS D R

AP2301AGN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 97m D Surface Mount Device ID - 3.3A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

AP2301AGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Package Outline RDS(ON) 97m Surface Mount Device ID - 3.3A S RoHS Compliant & Halogen-Free SOT-23 G D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,l

AP2301GN RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resistance and cost-effec

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

AP2301BGN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.8A RoHS Compliant & Halogen-Free S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

AP2301GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 130m D Surface Mount Device ID - 2.6A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resi

AP2301N-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switchi

AP2301EN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Capable of 2.5V Gate Drive BVDSS -20V D Small Package Outline RDS(ON) 130m Surface Mount Device ID -2.3A S RoHS Compliant & Halogen-Free SOT-23S G D Description Advanced Power MOSFETs from APEC provide the designer with the best G combination of fast switch

2301 P-Channel 20-V(D-S) MOSFET DATA SHEET DESCRIPTION D The 2301 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -20V 64m

AP2301BI -20V P-Channel Enhancement Mode MOSFET Description The AP2301BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-2.3A DS D R