AP4606B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4606B
Tipo de FET: MOSFET
Polaridad de transistor: NP
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 6.2(4.8) A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 46 nS
Cossⓘ - Capacitancia de salida: 62 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de AP4606B MOSFET
AP4606B Datasheet (PDF)
ap4606b.pdf
AP4606B 30V N+P-Channel Enhancement Mode MOSFET Description The AP4606B uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6.2A DS DR
ap4606p.pdf
AP4606PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 3.7m Fast Switching Characteristic ID3 125AG RoHS Compliant & Halogen-FreeSDescriptionAP4606 series are from Advanced Power innovated designand silicon process technology to achieve the lowes
ap4606cs.pdf
AP4606CS / Descriptions SOP-8 MOS Complementary Enhancement MOSFET in a SOP-8 Plastic Package. / Features N-channel P-channelVDS(V)=30V VDS(V)=-30V ID=6.9A ID=-6A RDS(ON)
ap4608s.pdf
AP4608SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 1.7m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from Advanced Power innovated designAP4608 series are from Advanced Power innovated des
Otros transistores... AP85N03NF , AP8G04S , AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AO4468 , AP4G02LI , AP8P06S , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF .
History: AP90N08NF | AP8G04S
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP60P02D | AP60N06F | AP60N04NF | AP60N04DF | AP60N04D | AP60N03Y | AP60N03NF | AP60N03DF | AP60N03D | AP60N02NF | AP60N02DF | AP60N02D | AP5P06MSI | AP5P04MI | AP40P04NF | AP40P04DF
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