AP8P06S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP8P06S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 19.8 nS

Cossⓘ - Capacitancia de salida: 97.3 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: SOP8

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AP8P06S datasheet

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 ap8p06s.pdf pdf_icon

AP8P06S

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R

 9.1. Size:1507K  cn apm
 ap8p04mi.pdf pdf_icon

AP8P06S

AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R

 9.2. Size:1717K  cn apm
 ap8p04s.pdf pdf_icon

AP8P06S

AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R

Otros transistores... AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, IRF9640, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, AP6G03S, AP6P04S