AP8P06S Spec and Replacement
Type Designator: AP8P06S
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19.8 nS
Cossⓘ - Output Capacitance: 97.3 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
Package: SOP8
AP8P06S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP8P06S Specs
ap8p06s.pdf
AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R ... See More ⇒
ap8p04mi.pdf
AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R ... See More ⇒
ap8p04s.pdf
AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R ... See More ⇒
Detailed specifications: AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , 60N06 , AP90N08NF , AP10G04S , AP15H06S , AP4957A , AP65N06D , AP65N06DF , AP6G03S , AP6P04S .
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