AP8P06S Datasheet. Specs and Replacement

Type Designator: AP8P06S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.8 nS

Cossⓘ - Output Capacitance: 97.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOP8

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AP8P06S datasheet

 ..1. Size:1725K  cn apm
 ap8p06s.pdf pdf_icon

AP8P06S

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS D R ... See More ⇒

 9.1. Size:1507K  cn apm
 ap8p04mi.pdf pdf_icon

AP8P06S

AP8P04MI -40V P-Channel Enhancement Mode MOSFET Description The AP8P04MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-8A DS D R ... See More ⇒

 9.2. Size:1717K  cn apm
 ap8p04s.pdf pdf_icon

AP8P06S

AP8P04S 40V P-Channel Enhancement Mode MOSFET Description The AP8P04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I = -8A DS D R ... See More ⇒

Detailed specifications: AP10N04S, AP15G04NF, AP220N06MP, AP2301AI, AP2302AI, AP3P06MI, AP4606B, AP4G02LI, 60N06, AP90N08NF, AP10G04S, AP15H06S, AP4957A, AP65N06D, AP65N06DF, AP6G03S, AP6P04S

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