All MOSFET. AP8P06S Datasheet

 

AP8P06S Datasheet and Replacement


   Type Designator: AP8P06S
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.8 nS
   Cossⓘ - Output Capacitance: 97.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOP8
 

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AP8P06S Datasheet (PDF)

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AP8P06S

AP8P06S -60V P-Channel Enhancement Mode MOSFET Description The AP8P06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-8A DS DR

Datasheet: AP10N04S , AP15G04NF , AP220N06MP , AP2301AI , AP2302AI , AP3P06MI , AP4606B , AP4G02LI , IRFB7545 , AP90N08NF , , , , , , , .

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