AP65R190 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65R190
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19.8 nS
Cossⓘ - Capacitancia de salida: 65 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Paquete / Cubierta: TO220
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AP65R190 Datasheet (PDF)
apj50n65f apj50n65p apj50n65t ap65r190.pdf
APJ50N65FIPIT (AP65R190) 650V N-Channel Enhancement Mode MOSFET Description The APJ50N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V
apj30n65f apj30n65p apj30n65t ap65r340.pdf
APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V IDM
Otros transistores... APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , 10N60 , APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D .
History: APJ14N65P | IRFP333 | SI3415B | AP10H10S | AP100N08D
History: APJ14N65P | IRFP333 | SI3415B | AP10H10S | AP100N08D
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