AP65R190 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP65R190 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 151 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19.8 nS
Cossⓘ - Capacitancia de salida: 65 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
Encapsulados: TO220
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AP65R190 datasheet
apj50n65f apj50n65p apj50n65t ap65r190.pdf
APJ50N65FIPIT (AP65R190) 650V N-Channel Enhancement Mode MOSFET Description The APJ50N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V
apj30n65f apj30n65p apj30n65t ap65r340.pdf
APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 740V
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V IDM
Otros transistores... APG60N10S, AP65R650, APJ30N65F, APJ30N65P, APJ30N65T, APJ50N65F, APJ50N65P, APJ50N65T, IRFZ44, APN9N50D, APJ14N65D, APJ14N65F, APJ14N65P, APJ14N65T, AP01P10I, AP100N03AD, AP100N03D
Parámetros del MOSFET. Cómo se afectan entre sí.
History: APG80N10T | IRF7752 | QM2402J | PJM2309PSC | APG60N10NF | APJ50N65P | 2SK1727
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