AP65R190 - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP65R190
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 151 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 21 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 19.8 ns
Cossⓘ - Выходная емкость: 65 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.19 Ohm
Тип корпуса: TO220
Аналог (замена) для AP65R190
AP65R190 Datasheet (PDF)
apj50n65f apj50n65p apj50n65t ap65r190.pdf
APJ50N65FIPIT (AP65R190) 650V N-Channel Enhancement Mode MOSFET Description The APJ50N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V
apj14n65f apj14n65p apj14n65t ap65r650.pdf
APJ14N65FIPIT (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V
apj30n65f apj30n65p apj30n65t ap65r340.pdf
APJ30N65FIPIT (AP65R340) 650V N-Channel Enhancement Mode MOSFET Description The APJ30N65F/P/T is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type740V
apj14n65d ap65r650.pdf
APJ14N65D (AP65R650) 650V N-Channel Enhancement Mode MOSFET Description The APJ14N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V IDM
Другие MOSFET... APG60N10S , AP65R650 , APJ30N65F , APJ30N65P , APJ30N65T , APJ50N65F , APJ50N65P , APJ50N65T , 10N60 , APN9N50D , APJ14N65D , APJ14N65F , APJ14N65P , APJ14N65T , AP01P10I , AP100N03AD , AP100N03D .
Список транзисторов
Обновления
MOSFET: AGM10N15D | AGM1099S | AGM1099EY | AGM1099E | AGM1099D | AGM1095MN | AGM1095MAP | AGM1075S | AGM1075MNA | AGM1075MN | AGM1075MBP | AGM1075-G | AGM1075D | AGM1030MNA | AGM1030MBP | AGM042N10A
Popular searches
c5242 transistor | 2sa726 replacement | a1941 datasheet | hrf3205 | c2837 datasheet | 2n414 | c3998 | c4468 datasheet







