APG60N10T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APG60N10T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 107 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.2 nS

Cossⓘ - Capacitancia de salida: 321.7 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: TO263

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APG60N10T datasheet

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 apg60n10p apg60n10t.pdf pdf_icon

APG60N10T

APG60N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG60N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

 6.1. Size:2235K  cn apm
 apg60n10nf.pdf pdf_icon

APG60N10T

APG60N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG60N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

 6.2. Size:2069K  cn apm
 apg60n10s.pdf pdf_icon

APG60N10T

APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

 6.3. Size:1272K  cn apm
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APG60N10T

APG60N10D 100V N-SGT Enhancement Mode MOSFET General Description APG60N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

MOSTRAR MÁS

Otros transistores... AP100N03P, AP100N03T, AP100N03Y, AP100N04D, AP100N04NF, AP100N08D, AP100P02NF, APG60N10P, IRF9540N, APG80N10NF, APG80N10P, APG80N10T, APJ10N65D, AP65R950, APJ10N65F, APJ10N65T, APJ10N65P