APG60N10T Datasheet and Replacement. Cross Reference Search

APG60N10T Datasheet (PDF)

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APG60N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG60N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

6.1. Size:2235K cn apm
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APG60N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG60N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

6.2. Size:2069K cn apm
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APG60N10S 100V N-SGT Enhancement Mode MOSFET General Description APG60N10S use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

6.3. Size:1272K cn apm
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APG60N10D 100V N-SGT Enhancement Mode MOSFET General Description APG60N10D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unifo

Datasheet: AP100N03P , AP100N03T , AP100N03Y , AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , K3569 , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P .