APG80N10NF Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APG80N10NF  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 135 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.5 nS

Cossⓘ - Capacitancia de salida: 605 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm

Encapsulados: DFN5X6-8L

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APG80N10NF datasheet

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APG80N10NF

APG80N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG80N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

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APG80N10NF

APG80N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG80N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

Otros transistores... AP100N03T, AP100N03Y, AP100N04D, AP100N04NF, AP100N08D, AP100P02NF, APG60N10P, APG60N10T, IRF1010E, APG80N10P, APG80N10T, APJ10N65D, AP65R950, APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D