APG80N10T Todos los transistores

 

APG80N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: APG80N10T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 361.2 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de APG80N10T MOSFET

   - Selección ⓘ de transistores por parámetros

 

APG80N10T Datasheet (PDF)

 ..1. Size:1170K  cn apm
 apg80n10p apg80n10t.pdf pdf_icon

APG80N10T

APG80N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG80N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u

 6.1. Size:1506K  cn apm
 apg80n10nf.pdf pdf_icon

APG80N10T

APG80N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG80N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni

Otros transistores... AP100N04D , AP100N04NF , AP100N08D , AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , IRLB4132 , APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S .

 

 
Back to Top

 


 
.