APG80N10T Datasheet. Specs and Replacement

Type Designator: APG80N10T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 361.2 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO263

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APG80N10T datasheet

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 apg80n10p apg80n10t.pdf pdf_icon

APG80N10T

APG80N10PIT 100V N-SGT Enhancement Mode MOSFET General Description APG80N10P/T use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and u... See More ⇒

 6.1. Size:1506K  cn apm
 apg80n10nf.pdf pdf_icon

APG80N10T

APG80N10NF 100V N-SGT Enhancement Mode MOSFET General Description APG80N10NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uni... See More ⇒

Detailed specifications: AP100N04D, AP100N04NF, AP100N08D, AP100P02NF, APG60N10P, APG60N10T, APG80N10NF, APG80N10P, 2SK3878, APJ10N65D, AP65R950, APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, AP10G03S

Keywords - APG80N10T MOSFET specs

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