APJ10N65F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APJ10N65F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 25.5 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26.4 nS
Cossⓘ - Capacitancia de salida: 13.7 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.95 Ohm
Paquete / Cubierta: TO220F
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APJ10N65F Datasheet (PDF)
apj10n65f apj10n65t apj10n65p ap65r950.pdf
APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type730V
apj10n65d ap65r950.pdf
APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type720V IDM =10A
Otros transistores... AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , AP65R950 , 4435 , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF , AP10G06S , AP10H04DF .
History: APJ50N65T | AP100N03AD | IRFP340A | AP10H10S | RUH85120S | AP100P04D
History: APJ50N65T | AP100N03AD | IRFP340A | AP10H10S | RUH85120S | AP100P04D
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