APJ10N65F Datasheet. Specs and Replacement

Type Designator: APJ10N65F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26.4 nS

Cossⓘ - Output Capacitance: 13.7 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm

Package: TO220F

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APJ10N65F datasheet

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 apj10n65f apj10n65t apj10n65p ap65r950.pdf pdf_icon

APJ10N65F

APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒

 6.1. Size:1579K  cn apm
 apj10n65d ap65r950.pdf pdf_icon

APJ10N65F

APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 720V IDM =10A... See More ⇒

Detailed specifications: AP100P02NF, APG60N10P, APG60N10T, APG80N10NF, APG80N10P, APG80N10T, APJ10N65D, AP65R950, 13N50, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, AP10G03S, AP10G06NF, AP10G06S, AP10H04DF

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