APJ10N65F MOSFET Datasheet: N-Ch, 650V, 5.5A. Full specification with pinout and replacement list

APJ10N65F Specs and Replacement

   Type Designator: APJ10N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 25.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 26.4 nS
   Cossⓘ - Output Capacitance: 13.7 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220F

APJ10N65F substitution

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APJ10N65F datasheet

..1. Size:1554K cn apm
apj10n65f apj10n65t apj10n65p ap65r950.pdf pdf_icon

APJ10N65FITIP (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65F/T/P is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ14N65F/P/T is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 730V... See More ⇒

6.1. Size:1579K cn apm
apj10n65d ap65r950.pdf pdf_icon

APJ10N65D (AP65R950) 650V N-Channel Enhancement Mode MOSFET Description The APJ10N65D is CoolFET II MOSFET family that is utilizing charge balance technology for extremely low on-resistance and low gate charge performance. APJ10N65D is suitable for applications which require superior power density and outstanding efficiency General Features V = 650V Type 720V IDM =10A... See More ⇒

Detailed specifications: AP100P02NF , APG60N10P , APG60N10T , APG80N10NF , APG80N10P , APG80N10T , APJ10N65D , AP65R950 , IRFP260 , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AP10G03S , AP10G06NF , AP10G06S , AP10H04DF .