AP10G03S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10G03S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 12(9.8) A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8.2(14.8) nS

Cossⓘ - Capacitancia de salida: 131(194) pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012(0.025) Ohm

Encapsulados: SOP8

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AP10G03S datasheet

 ..1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G03S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS D R

 8.1. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G03S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

 8.2. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G03S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R

 8.3. Size:2001K  cn apm
 ap10g04s.pdf pdf_icon

AP10G03S

AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS D R

MOSTRAR MÁS

Otros transistores... APG80N10T, APJ10N65D, AP65R950, APJ10N65F, APJ10N65T, APJ10N65P, AP100P03D, AP100P04D, SPP20N60C3, AP10G06NF, AP10G06S, AP10H04DF, AP10H10S, AP10N04MSI, AP10N06D, AP10N06MSI, APG40N10D