AP10G03S - аналоги и даташиты транзистора

 

AP10G03S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10G03S
   Тип транзистора: MOSFET
   Полярность: NP
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 12(9.8) A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 8.2(14.8) ns
   Cossⓘ - Выходная емкость: 131(194) pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012(0.025) Ohm
   Тип корпуса: SOP8
 

 Аналог (замена) для AP10G03S

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10G03S Datasheet (PDF)

 ..1. Size:2476K  cn apm
 ap10g03s.pdf pdf_icon

AP10G03S

AP10G03S 30V N+P-Channel Enhancement Mode MOSFET Description The AP10G03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12 A DS DR

 8.1. Size:2666K  cn apm
 ap10g04df.pdf pdf_icon

AP10G03S

AP10G04DF 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

 8.2. Size:2838K  cn apm
 ap10g06nf.pdf pdf_icon

AP10G03S

AP10G06NF 60V N+P-Channel Enhancement Mode MOSFET Description The AP10G006NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS DR

 8.3. Size:2001K  cn apm
 ap10g04s.pdf pdf_icon

AP10G03S

AP10G04S 40V N+P-Channel Enhancement Mode MOSFET Description The AP10G04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =9.8A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APG80N10T , APJ10N65D , AP65R950 , APJ10N65F , APJ10N65T , APJ10N65P , AP100P03D , AP100P04D , AO4407 , AP10G06NF , AP10G06S , AP10H04DF , AP10H10S , AP10N04MSI , AP10N06D , AP10N06MSI , APG40N10D .

History: AP100N08D | AP10H10S

 

 
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