APG130N06F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APG130N06F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 1250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: TO220F
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APG130N06F Datasheet (PDF)
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APG130N06PITIF 60V N-Channel Enhancement Mode MOSFET Description The APG130N06P/T/F uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =130A DS DR
apg130n06d.pdf

APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif
apg130n06nf.pdf

APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un
Otros transistores... APG40N10D , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , 2SK3568 , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P .



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