APG130N06F MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APG130N06F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 130 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 6.7 nS
Cossⓘ - Capacitancia de salida: 1250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de APG130N06F MOSFET
APG130N06F datasheet
apg130n06d.pdf
APG130N06D 60V N-SGT Enhancement Mode MOSFET General Description APG130N06D use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and unif
apg130n06nf.pdf
APG130N06NF 60V N-SGT Enhancement Mode MOSFET General Description APG130N06NF use advanced SGT MOSFET technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better ruggedness and suitable to use in Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and un
Otros transistores... APG40N10D , APG40N10DF , APG40N10NF , APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , 4N60 , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P .
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