AP10N15D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10N15D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 56 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm

Encapsulados: TO252

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AP10N15D datasheet

 ..1. Size:1893K  cn apm
 ap10n15d.pdf pdf_icon

AP10N15D

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS D R

 8.1. Size:1565K  allpower
 ap10n10k.pdf pdf_icon

AP10N15D

AIIP ER AP10N10K DATA SHEET N-Channel Power MOSFET D B T 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T R HS c mpliant & Hal gen-Free Description AP10N10K series are from Advanced Power innovated design and s T0-252 silicon process technology to achieve the lowest possible on resistance and fast switchi

 8.2. Size:1388K  cn apm
 ap10n10s.pdf pdf_icon

AP10N15D

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

 8.3. Size:1385K  cn apm
 ap10n10d.pdf pdf_icon

AP10N15D

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

MOSTRAR MÁS

Otros transistores... APG130N06P, APG130N06T, APG130N06F, APG180N04NF, APG20N06S, AP10N06S, AP10N10D, AP10N10S, 18N50, AP10N65F, AP10N65P, AP10P04D, AP10P06MSI, AP10P10D, AP120N04P, AP120N04T, AP120N06P