AP10N15D - аналоги и даташиты транзистора

 

AP10N15D - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP10N15D
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 30 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 150 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 56 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.28 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP10N15D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP10N15D Datasheet (PDF)

 ..1. Size:1893K  cn apm
 ap10n15d.pdf pdf_icon

AP10N15D

AP10N15D 150V N-Channel Enhancement Mode MOSFET Description The AP10N15D es advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =10A DS DR

 8.1. Size:1565K  allpower
 ap10n10k.pdf pdf_icon

AP10N15D

AIIP ERAP10N10K DATA SHEET N-Channel Power MOSFETD BT 100% & UIS Test Voss 100V T Simple Drive Requirement 135m0 Fast Switching Characteristic T lo 10A G T RHS cmpliant & Halgen-FreeDescription AP10N10K series are from Advanced Power innovated design and s T0-252silicon process technology to achieve the lowest possible onresistance and fast switchi

 8.2. Size:1388K  cn apm
 ap10n10s.pdf pdf_icon

AP10N15D

AP10N10S 100V N-Channel Enhancement Mode MOSFET Description The AP10N10S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12.3A DS D R

 8.3. Size:1385K  cn apm
 ap10n10d.pdf pdf_icon

AP10N15D

AP10N10D 100V N-Channel Enhancement Mode MOSFET Description The AP10N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =10A DS D R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , AP10N06S , AP10N10D , AP10N10S , IRF2807 , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI , AP10P10D , AP120N04P , AP120N04T , AP120N06P .

 

 
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