AP12N40P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP12N40P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 400 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 132 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.575 Ohm
Encapsulados: TO263
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AP12N40P datasheet
ap12n40f ap12n40p.pdf
AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
ap12n65f ap12n65p.pdf
AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
ap12n06s.pdf
AP12N06S 60V N-Channel Enhancement Mode MOSFET Description The AP12N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12A DS D R
Otros transistores... AP10P10D, AP120N04P, AP120N04T, AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, 60N06, AP12N65F, AP12N65P, AP150N03P, AP150N03T, AP150N10P, AP150N10T, AP160N04P, AP160N04T
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP13P06D | AP120P03D
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