AP12N40P Todos los transistores

 

AP12N40P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP12N40P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 33.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 400 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 9.6 nC
   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 132 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.575 Ohm
   Paquete / Cubierta: TO263
 

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AP12N40P Datasheet (PDF)

 ..1. Size:2006K  cn apm
 ap12n40f ap12n40p.pdf pdf_icon

AP12N40P

AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.1. Size:1505K  cn apm
 ap12n65f ap12n65p.pdf pdf_icon

AP12N40P

AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 9.2. Size:1654K  cn apm
 ap12n06s.pdf pdf_icon

AP12N40P

AP12N06S 60V N-Channel Enhancement Mode MOSFET Description The AP12N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12A DS DR

 9.3. Size:1508K  cn apm
 ap12n10y.pdf pdf_icon

AP12N40P

AP12N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP12N10Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =12A DS DR

MOSTRAR MÁS

Otros transistores... AP10P10D , AP120N04P , AP120N04T , AP120N06P , AP120N06T , AP120N08P , AP120N08T , AP12N40F , P60NF06 , AP12N65F , AP12N65P , AP150N03P , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T .

 

 
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