AP12N40P datasheet, аналоги, основные параметры
Наименование производителя: AP12N40P 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 33.2 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 12 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 132 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.575 Ohm
Тип корпуса: TO263
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Аналог (замена) для AP12N40P
- подборⓘ MOSFET транзистора по параметрам
AP12N40P даташит
ap12n40f ap12n40p.pdf
AP12N40FIP 400V N-Channel Enhancement Mode MOSFET Description The AP12N40F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
ap12n65f ap12n65p.pdf
AP12N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP12N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
ap12n06s.pdf
AP12N06S 60V N-Channel Enhancement Mode MOSFET Description The AP12N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =12A DS D R
Другие IGBT... AP10P10D, AP120N04P, AP120N04T, AP120N06P, AP120N06T, AP120N08P, AP120N08T, AP12N40F, 60N06, AP12N65F, AP12N65P, AP150N03P, AP150N03T, AP150N10P, AP150N10T, AP160N04P, AP160N04T
Параметры MOSFET. Взаимосвязь и компромиссы
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