AP150N10P Todos los transistores

 

AP150N10P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP150N10P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 148 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 150 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 645 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO220
 

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AP150N10P datasheet

 ..1. Size:1593K  cn apm
 ap150n10p ap150n10t.pdf pdf_icon

AP150N10P

AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS D R

 8.1. Size:534K  allpower
 ap150n03q.pdf pdf_icon

AP150N10P

 8.2. Size:588K  allpower
 ap150n03g.pdf pdf_icon

AP150N10P

 8.3. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N10P

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

MOSTRAR MÁS

Otros transistores... AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , IRFZ48N , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P .

History: AP110N04D

 

 

 


 
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