AP150N10P - аналоги и даташиты транзистора

 

AP150N10P - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP150N10P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 148 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 150 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Qg ⓘ - Общий заряд затвора: 75 nC
   tr ⓘ - Время нарастания: 13 ns
   Cossⓘ - Выходная емкость: 645 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP150N10P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP150N10P Datasheet (PDF)

 ..1. Size:1593K  cn apm
 ap150n10p ap150n10t.pdf pdf_icon

AP150N10P

AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS DR

 8.1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N10P

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 8.2. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N10P

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 8.3. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150N10P

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP120N08P , AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , 60N06 , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P .

 

 
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