AP150N10T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP150N10T
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 148 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 150 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 75 nC
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 645 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Paquete / Cubierta: TO263
Búsqueda de reemplazo de AP150N10T MOSFET
AP150N10T Datasheet (PDF)
ap150n10p ap150n10t.pdf
AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS DR
ap150n03d.pdf
AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR
ap150n03p ap150n03t.pdf
AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR
ap150n04d.pdf
AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR
Otros transistores... AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , AP150N10P , RU7088R , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP9N90T | AP9N90P | AP9N90F | AP90N06T | AP90N06P | AP85N08BT | AP85N08BP | AP80P10T | AP80P10P | AP80P06T | AP80P06P | AP80N10T | AP80N10P | AP80N07T | AP80N07P | AP7N65P
Popular searches
2sa1941 | 2sc485 | 2sd287 | 2sd438 | a1492 | hy4008 | ncep039n10m | 20n50