AP150N10T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP150N10T  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 148 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 150 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 645 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO263

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AP150N10T datasheet

 ..1. Size:1593K  cn apm
 ap150n10p ap150n10t.pdf pdf_icon

AP150N10T

AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS D R

 8.1. Size:534K  allpower
 ap150n03q.pdf pdf_icon

AP150N10T

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 ap150n03g.pdf pdf_icon

AP150N10T

 8.3. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N10T

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R

MOSTRAR MÁS

Otros transistores... AP120N08T, AP12N40F, AP12N40P, AP12N65F, AP12N65P, AP150N03P, AP150N03T, AP150N10P, AO4468, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T, AP180N03P, AP180N03T