All MOSFET. AP150N10T Datasheet

 

AP150N10T Datasheet and Replacement


   Type Designator: AP150N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 148 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 645 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO263
 

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AP150N10T Datasheet (PDF)

 ..1. Size:1593K  cn apm
 ap150n10p ap150n10t.pdf pdf_icon

AP150N10T

AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS DR

 8.1. Size:838K  cn apm
 ap150n03d.pdf pdf_icon

AP150N10T

AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 8.2. Size:910K  cn apm
 ap150n03p ap150n03t.pdf pdf_icon

AP150N10T

AP150N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP150N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS DR

 8.3. Size:1281K  cn apm
 ap150n04d.pdf pdf_icon

AP150N10T

AP150N04D 40V N-Channel Enhancement Mode MOSFET Description The AP150N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =150 A DS DR

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Datasheet: AP120N08T , AP12N40F , AP12N40P , AP12N65F , AP12N65P , AP150N03P , AP150N03T , AP150N10P , RU7088R , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T .

Keywords - AP150N10T MOSFET datasheet

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