AP150N10T Datasheet. Specs and Replacement
Type Designator: AP150N10T 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 148 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13 nS
Cossⓘ - Output Capacitance: 645 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
Package: TO263
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AP150N10T substitution
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AP150N10T datasheet
ap150n10p ap150n10t.pdf
AP150N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP150N10P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =150A DS D R ... See More ⇒
ap150n03d.pdf
AP150N03D 30V N-Channel Enhancement Mode MOSFET Description The AP150N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =150 A DS D R ... See More ⇒
Detailed specifications: AP120N08T, AP12N40F, AP12N40P, AP12N65F, AP12N65P, AP150N03P, AP150N03T, AP150N10P, AO4468, AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T, AP180N03P, AP180N03T
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