AP160N10P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP160N10P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 225 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 160 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 52 nS
Cossⓘ - Capacitancia de salida: 1200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0042 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP160N10P MOSFET
AP160N10P datasheet
ap160n10p ap160n10t.pdf
AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R
ap160n08p ap160n08t.pdf
AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R
ap160n04p ap160n04t.pdf
AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS D R
Otros transistores... AP150N03P , AP150N03T , AP150N10P , AP150N10T , AP160N04P , AP160N04T , AP160N08P , AP160N08T , AON7403 , AP160N10T , AP180N03P , AP180N03T , AP180N08P , AP180N08T , AP18N20D , AP18N20Y , AP190N15P .
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