AP160N10P - описание и поиск аналогов

AP160N10PIT 100V N-Channel Enhancement Mode MOSFET Description The AP160N10P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =100V I =160A DS D R

AP160N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP160N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =160A DS D R

AP160N04PIT 40V N-Channel Enhancement Mode MOSFET Description The AP160N04P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =160 A DS D R

All Power Semiconductor Co.,Ltd V1.0 1 All Power Semiconductor Co.,Ltd V1.0 2 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 2 -8V -3V VDS=-5V -2.5V -4V 1.5 1.5 -4.5V 1 1 -2.0V 125 C 0.5 0.5 25 C VGS=-1.5V 0 0 0 0.5 1 1.5 2 2.5 3 3.5 0 1 2 3 4 5 -VGS(Volts) -VDS (Volts) Figure 2 Transfer Characteristics (Note E) Fig 1 On-Region Charac