DMN32D2LV Todos los transistores

 

DMN32D2LV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: DMN32D2LV
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 10 V
   |Id|ⓘ - Corriente continua de drenaje: 0.4 A

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.2 V
   Cossⓘ - Capacitancia de salida: 39 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
   Paquete / Cubierta: SOT563

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DMN32D2LV Datasheet (PDF)

 ..1. Size:179K  diodes
dmn32d2lv.pdf

DMN32D2LV
DMN32D2LV

DMN32D2LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitan

 6.1. Size:274K  diodes
dmn32d2ldf.pdf

DMN32D2LV
DMN32D2LV

DMN32D2LDFCOMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold

 6.2. Size:178K  diodes
dmn32d2lfb4.pdf

DMN32D2LV
DMN32D2LV

DMN32D2LFB4N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Con

 8.1. Size:341K  diodes
dmn32d4sdw.pdf

DMN32D2LV
DMN32D2LV

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

Otros transistores... DMN3112S , DMN3112SSS , DMN3115UDM , DMN3150L , DMN3150LW , DMN3200U , DMN32D2LDF , DMN32D2LFB4 , STP65NF06 , DMN3300U , DMN3404L , DMN3730U , DMN3730UFB , DMN3730UFB4 , DMN4468LSS , DMN4800LSS , DMN4800LSSL .

 

 
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