DMN32D2LV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN32D2LV

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 0.4 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 39 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm

Encapsulados: SOT563

 Búsqueda de reemplazo de DMN32D2LV MOSFET

- Selecciónⓘ de transistores por parámetros

 

DMN32D2LV datasheet

 ..1. Size:179K  diodes
 dmn32d2lv.pdf pdf_icon

DMN32D2LV

DMN32D2LV DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitan

 6.1. Size:274K  diodes
 dmn32d2ldf.pdf pdf_icon

DMN32D2LV

DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Common Source Dual N-Channel MOSFET Case SOT-353 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold

 6.2. Size:178K  diodes
 dmn32d2lfb4.pdf pdf_icon

DMN32D2LV

DMN32D2LFB4 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case DFN1006H4-3 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal Con

 8.1. Size:341K  diodes
 dmn32d4sdw.pdf pdf_icon

DMN32D2LV

DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

MOSTRAR MÁS

Otros transistores... DMN3112S, DMN3112SSS, DMN3115UDM, DMN3150L, DMN3150LW, DMN3200U, DMN32D2LDF, DMN32D2LFB4, 20N50, DMN3300U, DMN3404L, DMN3730U, DMN3730UFB, DMN3730UFB4, DMN4468LSS, DMN4800LSS, DMN4800LSSL