DMN32D2LV MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN32D2LV
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.2 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 10 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V
Maximum Drain Current |Id|: 0.4 A
Drain-Source Capacitance (Cd): 39 pF
Maximum Drain-Source On-State Resistance (Rds): 1.2 Ohm
Package: SOT563
DMN32D2LV Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN32D2LV Datasheet (PDF)
dmn32d2lv.pdf
DMN32D2LVDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitan
dmn32d2ldf.pdf
DMN32D2LDFCOMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Common Source Dual N-Channel MOSFET Case: SOT-353 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold
dmn32d2lfb4.pdf
DMN32D2LFB4N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data N-Channel MOSFET Case: DFN1006H4-3 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage, 1.2V max Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Con
dmn32d4sdw.pdf
DMN32D4SDW DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 0.4 @ VGS = 10V 0.65A Fast Switching Speed 30V ESD Protected Gate 0.7 @ VGS = 4.5V 0.52A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G
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