AP180N08P Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP180N08P 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 284 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 180 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 58 nS
Cossⓘ - Capacitancia de salida: 808 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
Encapsulados: TO220
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AP180N08P datasheet
ap180n08p ap180n08t.pdf
AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS D R
ap180n03d.pdf
AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R
ap180n03p ap180n03t.pdf
AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R
Otros transistores... AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T, AP180N03P, AP180N03T, IRFB3206, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, AP190N15T, AP200N12P, AP200N12T, AP20N65F
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP120N02D
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