AP180N08P Datasheet. Specs and Replacement

Type Designator: AP180N08P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 284 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 85 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 808 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO220

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AP180N08P datasheet

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 ap180n08p ap180n08t.pdf pdf_icon

AP180N08P

AP180N08PIT 85V N-Channel Enhancement Mode MOSFET Description The AP180N08P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =180A DS D R ... See More ⇒

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AP180N08P

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AP180N08P

AP180N03D 30V N-Channel Enhancement Mode MOSFET Description The AP180N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =180A DS D R ... See More ⇒

 7.3. Size:1647K  cn apm
 ap180n03p ap180n03t.pdf pdf_icon

AP180N08P

AP180N03PIT 30V N-Channel Enhancement Mode MOSFET Description The AP180N03P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =180 A DS D R ... See More ⇒

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Detailed specifications: AP160N04P, AP160N04T, AP160N08P, AP160N08T, AP160N10P, AP160N10T, AP180N03P, AP180N03T, IRFB3206, AP180N08T, AP18N20D, AP18N20Y, AP190N15P, AP190N15T, AP200N12P, AP200N12T, AP20N65F

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