AP18N20Y Todos los transistores

 

AP18N20Y MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP18N20Y
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 45 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO251
 

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AP18N20Y datasheet

 ..1. Size:714K  cn apm
 ap18n20d ap18n20y.pdf pdf_icon

AP18N20Y

AP18N20DIY 200V N-Channel Enhancement Mode MOSFET Description The AP18N20D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

 7.1. Size:57K  ape
 ap18n20ags-hf.pdf pdf_icon

AP18N20Y

AP18N20AGS-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G rugge

 7.2. Size:99K  ape
 ap18n20gh-hf ap18n20gj-hf.pdf pdf_icon

AP18N20Y

AP18N20GH/J-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 200V D Low On-resistance RDS(ON) 170m Fast Switching Characteristics ID 18A RoHS Compliant & Halogen-Free G S Description Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D

 7.3. Size:172K  ape
 ap18n20gs.pdf pdf_icon

AP18N20Y

AP18N20GS/P-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Low Gate Charge BVDSS 200V Simple Drive Requirement RDS(ON) 170m Fast Switching Characteristic ID 18A G RoHS Compliant & Halogen-Free S Description AP18N20 series are from Advanced Power innovated design and silicon process technology to achieve the lowes

MOSTRAR MÁS

Otros transistores... AP160N08T , AP160N10P , AP160N10T , AP180N03P , AP180N03T , AP180N08P , AP180N08T , AP18N20D , 60N06 , AP190N15P , AP190N15T , AP200N12P , AP200N12T , AP20N65F , AP20N65P , AP30N06P , AP30N06T .

 

 

 


 
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