DMN3300U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

DMN3300UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 150 m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 200 m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-S

DMN33D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 250 mA ESD Protected Gate to 2kV 30V 5 @ VGS = 4.0V 200 mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7 @ VGS = 2.5V 100 mA

DMN33D8LVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 30V 350 mA ESD Protected Gate to 2kV 7 @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G

DMN33D8LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 3.0 @ VGS = 10V 250mA Fast Switching Speed 30V 3.8 @ VGS = 5V 200mA Low Input/Output Leakage ESD Protected 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description an

DMN33D8LTN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance5 @ VGS = 4V 200 mA Low Input Capacitance 30V 7 @ VGS = 2.5V 115 mA Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate 2KV Totally Lead-Free & Fully RoHS Compliant (No