DMN3300U
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3300U
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 2
A
Cossⓘ -
Output Capacitance: 193
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15
Ohm
Package:
SOT23
DMN3300U
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3300U
Datasheet (PDF)
..1. Size:156K diodes
dmn3300u.pdf 
DMN3300UN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 150 m @VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 200 m @VGS = 2.5V Moisture Sensitivity: Level 1 per J-S
9.1. Size:284K diodes
dmn33d8ldw.pdf
DMN33D8LDWDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 250 mA ESD Protected Gate to 2kV 30V 5 @ VGS = 4.0V 200 mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 7 @ VGS = 2.5V 100 mA
9.2. Size:284K diodes
dmn33d8lv.pdf
DMN33D8LVDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 3 @ VGS = 4.5V 30V 350 mA ESD Protected Gate to 2kV 7 @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G
9.3. Size:265K diodes
dmn33d8l.pdf
DMN33D8LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C 3.0 @ VGS = 10V 250mA Fast Switching Speed 30V 3.8 @ VGS = 5V 200mA Low Input/Output Leakage ESD Protected 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description an
9.4. Size:247K diodes
dmn33d8lt.pdf
DMN33D8LTN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features N-Channel MOSFETID V(BR)DSS RDS(ON) TA = +25C Low On-Resistance5 @ VGS = 4V 200 mA Low Input Capacitance 30V 7 @ VGS = 2.5V 115 mA Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate 2KV Totally Lead-Free & Fully RoHS Compliant (No
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