DMN3300U Specs and Replacement

Type Designator: DMN3300U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 2 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 193 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: SOT23

DMN3300U substitution

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DMN3300U datasheet

 ..1. Size:156K  diodes
 dmn3300u.pdf pdf_icon

DMN3300U

DMN3300U N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case SOT-23 150 m @VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 200 m @VGS = 2.5V Moisture Sensitivity Level 1 per J-S... See More ⇒

 9.1. Size:284K  diodes
 dmn33d8ldw.pdf pdf_icon

DMN3300U

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 9.2. Size:284K  diodes
 dmn33d8lv.pdf pdf_icon

DMN3300U

DMN33D8LV DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C Fast Switching Speed 3 @ VGS = 4.5V 30V 350 mA ESD Protected Gate to 2kV 7 @ VGS = 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. G... See More ⇒

 9.3. Size:265K  diodes
 dmn33d8l.pdf pdf_icon

DMN3300U

DMN33D8L N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25 C 3.0 @ VGS = 10V 250mA Fast Switching Speed 30V 3.8 @ VGS = 5V 200mA Low Input/Output Leakage ESD Protected 2KV Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Description an... See More ⇒

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Detailed specifications: DMN3112SSS, DMN3115UDM, DMN3150L, DMN3150LW, DMN3200U, DMN32D2LDF, DMN32D2LFB4, DMN32D2LV, IRF520, DMN3404L, DMN3730U, DMN3730UFB, DMN3730UFB4, DMN4468LSS, DMN4800LSS, DMN4800LSSL, DMS3016SFG

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