AP85N08BP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP85N08BP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 160 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 354 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0085 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de AP85N08BP MOSFET
AP85N08BP Datasheet (PDF)
ap85n08bp ap85n08bt.pdf

AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS DR
ap85n04nf.pdf

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR
ap85n03nf.pdf

AP85N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP85N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =85 A DS DR
Otros transistores... AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T , AP80P10P , AP80P10T , IRFB3607 , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , , .



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