AP85N08BP PDF and Equivalents Search

 

AP85N08BP Specs and Replacement

Type Designator: AP85N08BP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 354 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO220

AP85N08BP substitution

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AP85N08BP datasheet

 ..1. Size:1817K  cn apm
 ap85n08bp ap85n08bt.pdf pdf_icon

AP85N08BP

AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS D R ... See More ⇒

 8.1. Size:650K  allpower
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AP85N08BP

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AP85N08BP

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AP85N08BP

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Detailed specifications: AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T , AP80P10P , AP80P10T , K4145 , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AP110N04D , AP120N02D .

History: IXFN50N50

Keywords - AP85N08BP MOSFET specs

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