AP85N08BP Datasheet and Replacement
Type Designator: AP85N08BP
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 160 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 61 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 354 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
AP85N08BP substitution
AP85N08BP Datasheet (PDF)
ap85n08bp ap85n08bt.pdf

AP85N08BPIT 80V N-Channel Enhancement Mode MOSFET Description The AP85N08BP/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 80V I =85A DS DR
ap85n04nf.pdf

AP85N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP85N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =100 A DS DR
ap85n03nf.pdf

AP85N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP85N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =85 A DS DR
Datasheet: AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AP80P06T , AP80P10P , AP80P10T , IRFB3607 , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , , .
Keywords - AP85N08BP MOSFET datasheet
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