AP90N06T Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP90N06T 📄📄

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 108 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 90 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 286 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO263

📄📄 Copiar

Búsqueda de reemplazo de AP90N06T MOSFET

- Selecciónⓘ de transistores por parámetros

AP90N06T datasheet

..1. Size:1413K cn apm
ap90n06p ap90n06t.pdf pdf_icon

AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

7.1. Size:2408K cn apm
ap90n06d.pdf pdf_icon

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

7.2. Size:1327K cn apm
ap90n06f.pdf pdf_icon

AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R

8.1. Size:588K 1
ap90n03q.pdf pdf_icon