AP90N06T - Даташиты. Аналоги. Основные параметры

AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR

AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS DR

AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS DR

AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS DR

AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS DR