AP120N03D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP120N03D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43.4 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 393 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm

Encapsulados: TO252

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AP120N03D datasheet

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AP120N03D

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

 6.1. Size:578K  allpower
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AP120N03D

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AP120N03D

 6.3. Size:1444K  cn apm
 ap120n03nf.pdf pdf_icon

AP120N03D

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

MOSTRAR MÁS

Otros transistores... AP85N08BT, AP90N06P, AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, 4435, AP120N03NF, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S