AP120N03D Todos los transistores

 

AP120N03D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP120N03D
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 43.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 393 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
   Paquete / Cubierta: TO252
 

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AP120N03D datasheet

 ..1. Size:1481K  cn apm
 ap120n03d.pdf pdf_icon

AP120N03D

AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

 6.1. Size:578K  allpower
 ap120n03.pdf pdf_icon

AP120N03D

 6.2. Size:1631K  allpower
 ap120n03k.pdf pdf_icon

AP120N03D

 6.3. Size:1444K  cn apm
 ap120n03nf.pdf pdf_icon

AP120N03D

AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R

MOSTRAR MÁS

Otros transistores... AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AP110N04D , AP120N02D , CS150N03A8 , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S .

 

 

 


 
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