AP120N03D Datasheet. Specs and Replacement
Type Designator: AP120N03D 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 393 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: TO252
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AP120N03D datasheet
ap120n03d.pdf
AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
ap120n03nf.pdf
AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒
Detailed specifications: AP85N08BT, AP90N06P, AP90N06T, AP9N90F, AP9N90P, AP9N90T, AP110N04D, AP120N02D, 4435, AP120N03NF, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S
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