AP120N03D MOSFET Datasheet: N-Ch, 30V, 120A. Full specification with pinout and replacement list

AP120N03D Specs and Replacement

Type Designator: AP120N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 393 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm

Package: TO252

AP120N03D substitution

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AP120N03D datasheet

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AP120N03D 30V N-Channel Enhancement Mode MOSFET Description The AP120N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒

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AP120N03NF 30V N-Channel Enhancement Mode MOSFET Description The AP120N03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =120A DS D R ... See More ⇒

Detailed specifications: AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P , AP9N90T , AP110N04D , AP120N02D , CS150N03A8 , AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S .