AP13P06D Todos los transistores

 

AP13P06D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP13P06D
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20.1 nS
   Cossⓘ - Capacitancia de salida: 76 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
   Paquete / Cubierta: TO252
 

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AP13P06D datasheet

 ..1. Size:1589K  cn apm
ap13p06d.pdf pdf_icon

AP13P06D

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 7.1. Size:1763K  cn apm
ap13p06y.pdf pdf_icon

AP13P06D

AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 9.1. Size:62K  ape
ap13p15gs p-hf.pdf pdf_icon

AP13P06D

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design

 9.2. Size:100K  ape
ap13p15gj-hf.pdf pdf_icon

AP13P06D

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application

Otros transistores... AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S , IRFP250 , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , AP30P10P , AP320N04TLG5 , AP3400AI , AP3400BI .

 

 

 


 
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