AP13P06D MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP13P06D
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.1 nS
Cossⓘ - Capacitancia de salida: 76 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de AP13P06D MOSFET
AP13P06D Datasheet (PDF)
ap13p06d.pdf

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS DR
ap13p06y.pdf

AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS DR
ap13p15gs p-hf.pdf

AP13P15GS/P-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13AGSDescriptionAdvanced Power MOSFETs from APEC provide the designer with theGbest combination of fast switching, ruggedized device design
ap13p15gj-hf.pdf

AP13P15GH/J-HFHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13AG RoHS Compliant & Halogen-FreeSDescriptionThe TO-252 package is widely preferred for all commercial-industrialGDsurface mount application
Otros transistores... AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S , IRFP250 , AP13P06Y , AP13P20D , , , , , , .



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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AP13P20D | AP13P06Y | AP13P06D | AP12P04S | AP12N10Y | AP12N06S | AP120P03D | AP120N10NF | AP120N08NF | AP120N04D | AP120N03NF | AP120N03D | AP120N02D | AP110N04D | AP9N90T | AP9N90P
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