AP13P06D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP13P06D 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 13.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 20.1 nS
Cossⓘ - Capacitancia de salida: 76 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.115 Ohm
Encapsulados: TO252
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AP13P06D datasheet
ap13p06d.pdf
AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R
ap13p06y.pdf
AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R
ap13p15gs p-hf.pdf
AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design
ap13p15gj-hf.pdf
AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application
Otros transistores... AP120N03NF, AP120N04D, AP120N08NF, AP120N10NF, AP120P03D, AP12N06S, AP12N10Y, AP12P04S, IRFP450, AP13P06Y, AP13P20D, AP30P03DF, AP30P06D, AP30P10P, AP320N04TLG5, AP3400AI, AP3400BI
Parámetros del MOSFET. Cómo se afectan entre sí.
History: AP120P03D
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