AP13P06D - описание и поиск аналогов

 

Аналоги AP13P06D. Основные параметры


   Наименование производителя: AP13P06D
   Тип транзистора: MOSFET
   Полярность: P
   Pd ⓘ - Максимальная рассеиваемая мощность: 31.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 13.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 20.1 ns
   Cossⓘ - Выходная емкость: 76 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.115 Ohm
   Тип корпуса: TO252
 

 Аналог (замена) для AP13P06D

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP13P06D даташит

 ..1. Size:1589K  cn apm
ap13p06d.pdfpdf_icon

AP13P06D

AP13P06D -60V P-Channel Enhancement Mode MOSFET Description The AP13P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 7.1. Size:1763K  cn apm
ap13p06y.pdfpdf_icon

AP13P06D

AP13P06Y -60V P-Channel Enhancement Mode MOSFET Description The AP13P06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-13.5A DS D R

 9.1. Size:62K  ape
ap13p15gs p-hf.pdfpdf_icon

AP13P06D

AP13P15GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -150V Fast Switching Characteristic RDS(ON) 300m RoHS Compliant & Halogen-Free ID -13A G S Description Advanced Power MOSFETs from APEC provide the designer with the G best combination of fast switching, ruggedized device design

 9.2. Size:100K  ape
ap13p15gj-hf.pdfpdf_icon

AP13P06D

AP13P15GH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -150V Simple Drive Requirement RDS(ON) 300m Fast Switching Characteristic ID -13A G RoHS Compliant & Halogen-Free S Description The TO-252 package is widely preferred for all commercial-industrial G D surface mount application

Другие MOSFET... AP120N03NF , AP120N04D , AP120N08NF , AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S , IRFP250 , AP13P06Y , AP13P20D , AP30P03DF , AP30P06D , AP30P10P , AP320N04TLG5 , AP3400AI , AP3400BI .

History: UF830 | 4N60Z

 

 

 


 
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