AP30P03DF Todos los transistores

 

AP30P03DF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP30P03DF
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 29 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 32 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.2 nS
   Cossⓘ - Capacitancia de salida: 194 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: PDFN3X3-8L
 

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AP30P03DF Datasheet (PDF)

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AP30P03DF

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS DR

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AP30P03DF

AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS DBVDSS/TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS Dm RDS(O

 8.1. Size:1643K  cn apm
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AP30P03DF

AP30P01DF -12V P-Channel Enhancement Mode MOSFET Description The AP30P01DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -12V I =-30A DS DR

 8.2. Size:1398K  cn apm
 ap30p02df.pdf pdf_icon

AP30P03DF

AP30P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP30P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-30A DS DR

MOSTRAR MÁS

Otros transistores... AP120N10NF , AP120P03D , AP12N06S , AP12N10Y , AP12P04S , AP13P06D , AP13P06Y , AP13P20D , 75N75 , AP30P06D , AP30P10P , AP320N04TLG5 , AP3400AI , AP3400BI , AP3400CI , AP3400DI , AP3400MI-L .

History: 2SK3797 | IRFZ34A

 

 
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