AP30P03DF PDF and Equivalents Search

 ..1. Size:1462K  cn apm
 ap30p03df.pdf

AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R ... See More ⇒

 6.1. Size:858K  cn apm
 ap30p03d.pdf

AP30P03D -30V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 , unless otherwise noted) Symbol Parameter Conditions Min. Typ. Max. Unit BVDSS Drain-Source Breakdown Voltage V =0V , I =-250uA -30 --- --- V GS D BVDSS/ TJ BV Temperature Coefficient DSS Reference to 25 , I =-1mA --- -0.022 --- D V/ V =-10V , I =-15A --- 18 20 GS D m RDS(O... See More ⇒

 8.1. Size:592K  allpower
 ap30p06.pdf

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 8.2. Size:680K  allpower
 ap30p06k.pdf

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 8.3. Size:1643K  cn apm
 ap30p01df.pdf

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 8.4. Size:1398K  cn apm
 ap30p02df.pdf

AP30P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP30P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-30A DS D R ... See More ⇒

 8.5. Size:1655K  cn apm
 ap30p06d.pdf

AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R ... See More ⇒