AP3400AI Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3400AI  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 5.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 47 nS

Cossⓘ - Capacitancia de salida: 84 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: SOT23

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AP3400AI datasheet

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AP3400AI

AP3400AI 30V N-Channel Enhancement Mode MOSFET Description The AP3400AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

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AP3400AI

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AP3400AI

 8.3. Size:1265K  cn apm
 ap3400mi-l.pdf pdf_icon

AP3400AI

AP3400MI-L 30V N-Channel Enhancement Mode MOSFET Description The AP3400MI-LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =5.8A DS D R

MOSTRAR MÁS

Otros transistores... AP12P04S, AP13P06D, AP13P06Y, AP13P20D, AP30P03DF, AP30P06D, AP30P10P, AP320N04TLG5, 4N60, AP3400BI, AP3400CI, AP3400DI, AP3400MI-L, AP3401AI, AP3401MI, AP3404BI, AP3407AI